Introduction of GaN-on-GaN Design
Onsemi conductor has introduced a new generation of vertical gallium nitride (vGaN) devices featuring GaN-on-GaN architecture.
This design is meant to enhance power density, efficiency, and reliability in high-performance applications.
Key Benefits
- Enables operation at higher voltages
- Enables operation at higher switching frequencies
Unlike lateral GaN structures built on silicon or sapphire substrates, the vertical configuration conducts current through the semiconductor material itself.
No direct quote available in the text.
Author's summary: Onsemi introduces vGaN devices.
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